Title page for etd-0518114-135842


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URN etd-0518114-135842
Author Bo You
Author's Email Address a7714@msn.com
Statistics This thesis had been viewed 5562 times. Download 1301 times.
Department Electro-Optical Engineering
Year 2013
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs
Date of Defense 2014-06-13
Page Count 120
Keyword
  • SOI
  • Charge Pumping
  • Random Telegraph Signal
  • hot carrier stress
  • double diffused drain
  • Abstract Transistors with Moore's Law to the number of transistors per unit area of 18 months to grow geometrically, which not only reduces the cost of the process and improve the processing speed of the IC. Several issues attendant also waiting for us to overcome, such as: Continued scaling process, the interface defects affect the carrier transport in the channel is getting worse. How to use technical analysis interface defect becomes a very important research. This is also the subject of study. The first part of the thesis is based on Random Telegraph Signal measurements to explore and research as defect. Device used for the PD SOI n-MOSFETs. It was found that a significant drain of RTN Current is located in moderate inversion. So first discuss the current dominant mechanism, and use RTN to further analysis the distribution of interface defects The second part of the investigation is based on the Charge Pumping technology as to explore and research the STI. Device used for the double diffused drain p-type metal oxide semiconductor field effect transistors. After 2000 seconds hot carrier stress was found in the off state will produce drain leakage current. The impacts of hot carrier stress in device were analyzed by the conventional electric measurement and Charge Pumping technology. After proposed leakage mechanisms, the experiment use simulation, Charge Pumping technology, STI with different structure to verification the mechanisms.
    Advisory Committee
  • Zhen-Ming Wu - chair
  • Tsung-Ming Tsai - co-chair
  • Ting-Chang Chang - advisor
  • Yu-Ju Hung - advisor
  • Files
  • etd-0518114-135842.pdf
  • Indicate in-campus at 2 year and off-campus access at 2 year.
    Date of Submission 2014-06-18

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