Title page for etd-0406114-170143


[Back to Results | New Search]

URN etd-0406114-170143
Author You-Yi Chen
Author's Email Address No Public.
Statistics This thesis had been viewed 5356 times. Download 909 times.
Department Mechanical and Electro-Mechanical Engineering
Year 2013
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Simulation and Analysis of 3D IC Through Silicon Vias (TSVs) Arrays under High-Frequency Electromagnetic Fields
Date of Defense 2014-06-12
Page Count 146
Keyword
  • Decoupling Capacitor
  • , Through Via
  • Shorting Via
  • Finite Element Method
  • Through Silicon Via
  • S-parameter
  • Equivalent Circuit Model
  • Abstract This study consists of two parts. First part is about the through via in printed circuit board (PCB). In the PCB, signal transmission between different layers occurs by way of through via. The excessive capacitance is generated near the through via. Such capacitance influences the signal transmission between different layers. Through via also cause return current path discontinuous. It excites parasitic transverse electromagnetic modes in PCB. Both excessive capacitance and return current path discontinuous cause the power loss. Some techniques solving this problem are discussed. Finite element method (FEM) is used to simulate the high frequency electromagnetism and extract the S-parameters. S-parameters are used to describe the electrical behavior of through via. By these model, we want to predict the signal transmission performance of the through via structure. 
    Second part is about through silicon via (TSV). TSV which is used to connect stacked chips in a vertical fashion become the heart of this technique, because there are big signal attenuation in the wire bonding approach and large solder balls in the flip-chip. When a high frequency signal is transmitted vertically through the substrate via, low resistivity silicon substrate will cause significant signal attenuation and lead poor ratio frequency (RF) performance. 3D electromagnetic field solver is employed to build up finite element models. Equivalent circuit model is also used to simulate the electrical performance of TSV. The impact of different TSV shapes and materials on electrical performance is evaluated by using S-parameters. By these models, we want to propose an accurate finite element model to predict electrical performance of TSV and easily design 3D IC integration for designer.
    Advisory Committee
  • Ben-Je Lwo - chair
  • Sheng-Chih Shen - co-chair
  • Yeong-Shu Chen - co-chair
  • Mei-Ling Wu - advisor
  • Files
  • etd-0406114-170143.pdf
  • Indicate in-campus at 3 year and off-campus access at 3 year.
    Date of Submission 2014-07-21

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have more questions or technical problems, please contact eThesys