Title page for etd-0328117-112151


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URN etd-0328117-112151
Author Yu-hao Lee
Author's Email Address No Public.
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Department Electrical Engineering
Year 2016
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Reduced Graphene Oxide Deposition by Electrophoresis
Date of Defense 2017-04-29
Page Count 73
Keyword
  • potassium hydroxide
  • electrophoresis
  • reduced graphene oxide
  • Abstract Graphene is immensely attractive to the scientific community. As the candidate for its electrical and mechanical properties, including high thermal conductivity, low resistivity and high electron mobility make it a candidate for next electrical materials.
    Since it discovered and proved exist alone, the relevant research is made and gets a lot of scholar’s concern. Because of its physical and material properties make is become the next generation of nano-materials. Graphene is widely used in photovoltaic components, electronic components, nano-composite materials, solar cells, and sensors recently.
    The research is mainly on using different preparation conditions by electrophoresis deposition to grow graphene film on the ITO substrate. And then make analysis and discussion to the production of graphene properties.
    In this research, the pristine graphite was used as the material to grow graphene by electrophoresis. By adjusting the embedded voltage, enhancing the temperature, increasing the concentration, and doping insure to optimize the quality of graphene. The graphene production will be observed by optical microscope and scanning electron microscope for graphene surface structure. The purity, material defects and lattice structure were analyzed by XRD and Raman spectroscopy to confirm the composition and preparation of graphene quality.
    The surface morphology of films was observed by electron microscopy, and was found that the electrophoretic deposition had obvious nanostructure and flat stacking. In the higher temperature and doping potassium hydroxide, the Raman spectrum measurement of its defects (Id/Ig) could be reduced to 0.6 below. And found in high concentrations, higher temperature, doping could get great graphene film.
    Advisory Committee
  • Jian-Chiun Liou - chair
  • Shih-Hung Lin - co-chair
  • Yi-Tsung Chang - advisor
  • Cheng-Yu Ma - advisor
  • Files
  • etd-0328117-112151.pdf
  • Indicate in-campus at 3 year and off-campus access at 3 year.
    Date of Submission 2017-04-28

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