Title page for etd-0306115-234101


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URN etd-0306115-234101
Author Hsin-Lei Chou
Author's Email Address No Public.
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Department Physics
Year 2014
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Study of the Structural and Electronic Properties for the Bi on decorated Si(111) surface
Date of Defense 2015-03-16
Page Count 93
Keyword
  • Scanning tunneling microscope
  • Si(111)
  • Honeycomb
  • Bi
  • Topological insulator
  • Abstract The Honeycomb structure of meatal with high atomic number was predicted as a candidate which can show the topological edge state. To find the new material having topological state, Bi atoms were deposited on Si(111)-√3×√3-R30°-Au surface by electron beam evaporate under the ultra high vacuum. After post-annealing procedures, an ordered structure of Bi was observed, showing the √3×√3 superstructure in low energy electron diffraction. From measurement of scanning tunneling microscope, Bi honeycomb was found under different sample bias. Therefore, it was confirmed that Bi formed the honeycomb structure on Si(111)-√3×√3-R30°-Au surface, and Au trimmer was the role which stablized the Bi honeycomb. To identify wether proposed topological edge state exist on Bi honeycomb, the electronic structure of different regions on surface was measureed by scanning tunneling spectroscope. At edge of Bi honeycomb, different dI/dV feature was found. It was a possible evidence to prove the topological state existing on edge of Bi honeycomb.
    Advisory Committee
  • Feng-Chuan Chuang - chair
  • Chii-Bin Wu - co-chair
  • Chien-Cheng Kuo - advisor
  • Files
  • etd-0306115-234101.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2015-04-07

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