Title page for etd-0223116-144516


[Back to Results | New Search]

URN etd-0223116-144516
Author YU-JUNG CHENG
Author's Email Address No Public.
Statistics This thesis had been viewed 5384 times. Download 0 times.
Department Physics
Year 2015
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations
Date of Defense 2016-02-04
Page Count 75
Keyword
  • III-V Nitrides
  • Molecular Beam Epitaxy (MBE)
  • Nonpolar
  • Manganese
  • Raman spectroscopy
  • Abstract In this research, we grow m-plane gallium nitride on sapphire substrate using molecular beam epitaxy system, then using metal-organic chemical vapor deposition (MOCVD) to grow a thick layer of m-plane gallium nitride as a template. On the top layer we use molecular beam epitaxy (MBE) with shutter control to grow GaN:Mn thin film. With the characterizations from Raman spectroscopy, x-ray diffraction, electron microscopy, a comprehensive understanding of the materials will be obtained in terms of structural and optical properties.
    Advisory Committee
  • Cheng-Maw Cheng - chair
  • Mitch Chou - co-chair
  • Chao-Kuei Lee - co-chair
  • Li-Wei Tu - advisor
  • Files
  • etd-0223116-144516.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2016-03-23

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have more questions or technical problems, please contact eThesys