Title page for etd-0201113-131209


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URN etd-0201113-131209
Author Shih-Jie Lin
Author's Email Address No Public.
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Department Mechanical and Electro-Mechanical Engineering
Year 2012
Semester 1
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title MOCVD equipment and TwinCAT controlling system for Zinc oxide thin films deposition
Date of Defense 2013-01-23
Page Count 57
Keyword
  • CVD equipment
  • TwinCAT
  • ZnO
  • MOCVD
  • Simulation
  • Abstract In recent years, due to the rapid development of optoelectronic semiconductor material, it’s related research with applications is proposed, such as the main optoelectronic products of solar cells, flat-panel displays, light emitting devices and waveguide devices, etc. Conductivity and transparency are important considerations in the application of the optoelectronics. Since the glass is not conductive, so a good transparent conductive substrate material needs to be coated with the transparent conductive oxide.
    In this thesis, a 5.5-generation vertical MOCVD(Metal-Organic Chemical Vapor Deposition) coating equipment has been built in cooperation with the industrial manufacturers together. With the help of TwinCAT(The Windows Control And Automation Technology), DEZn and H2O as precursors, the MOCVD is automafed to deposite zinc oxide thin films on glass, to provide transparent conductive electrodes of ZnO to solar cell glass substrate.
    Using the simulation software of COMSOL Multiphysics and 3D CAD program of Inventor the concentration, pressure and velocity distribution of precursors are analyzed various experimental parameters for the deposition rate and film uniformity. Appling MOCVD equipment the sample has been coated with ZnO and compared with simulation results. This work supplies a basic data and simulation to improve the process parameters of MOCVD.
    Advisory Committee
  • Yuang-Cherng Chiou - chair
  • Jeff Chang - co-chair
  • Tai-Fa Young - advisor
  • Files
  • etd-0201113-131209.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2013-02-01

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