|Author's Email Address
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|Type of Document
||Investigation on Electrical Characteristics at Low Temperature and Photo Leakage Current of a-Si Thin Film Transistor|
|Date of Defense
thin film transistor
photo leakage current
a-Si thin film transistor
||Since the traditional CRT(Cathode Ray Tube) replaced by FPD(Flat Panel Display), e.g. LCD、OLED、PDP, FPD industry is regarded as the important one of global industry following Semi-conductor industry. The main stream of Large-Area Displays is TFT-LCD(Thin Film Transistor-Liquid Crystal Display) and it’s applied a-Si:H TFT (the hydrogenated Amorphous Silicon Thin Film Transistor) as pixel-switch device on LCD.|
In a-Si:H TFT Cell process, the active region material(a-Si:H) with higher Photoconductivity results into higher off-state current under light illumination and that causes color performance discrepancy as incomplete On/Off operation of pixel-switch devices. As long as the introduction of F into a-Si:H modify the density of states in the gap of a-Si:H(:F), that may result the shift of the Fermi level toward the valence band edge and The density-of-states increasing. It’s effective to decrease the photo leakage current.
Due to electro-optical properties of liquid crystal(LC), to drive Pixel-switch device in TFT-LCD shall force On/Off voltage to change Twist Angle of LC is corresponding to have Stress on TFT device. According to DC Stress experiment results, it’s found TFT device with SiF4 dopant can reach better reliability.
This issue is aimed to research the photo leakage current variation of a-Si:H TFT at low temperature and ON/Off state effect by stress on TFT device.
||An-Kuo Chu - chair|
Jung-Fang Chang - co-chair
Cheng-Tung Huang - co-chair
Ting-Chang Chang - advisor
indicate access worldwide|
|Date of Submission