Title page for etd-0115117-215818


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URN etd-0115117-215818
Author Wei-Cheng Lin
Author's Email Address d983010032@student.nsysu.edu.tw
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Department Electrical Engineering
Year 2016
Semester 1
Degree Ph.D.
Type of Document
Language zh-TW.Big5 Chinese
Title Study of distortion of MOSFET in the weak avalanche region under different geometry conditions using Volterra series
Date of Defense 2017-01-10
Page Count 88
Keyword
  • avalanche network
  • weak avalanche
  • nonlinearity
  • cancellation mechanism
  • Volterra series
  • MOSFET
  • Abstract This work analyzes the influence of geometry on distortion for MOSFETs operating in the weak avalanche region through the Volterra series method. The linearity of the MOSFETs in the saturation and weak avalanche regions is analyzed for different channel length first. Second, the linearity with respect to gate width is investigated. By compromise between linearity, gain, output power, and efficiency, a suitable geometry of the MOSFET is obtained for providing guideline of device size selection. In the presented Volterra analysis, the nonlinear model for MOSFETs incorporates with the avalanche network in order to achieve accuracy of the model in the weak avalanche region. The analyzed bias range is from the saturation to weak avalanche region. The equivalent circuit model of the MOSFETs is established at each bias point, and the polynomial coefficients of the nonlinear elements are obtained by polynomial expansion. The node voltage responses are computed from the first order to higher order and then the Volterra kernels can be obtained for nonlinear contribution determination. Nonlinear distortion decreases with reducing channel length in the weak avalanche region. This is due to internal nonlinear cancellation mechanism between the breakdown inductance and transconductance nonlinearities. The increased breakdown inductance contribution with reducing channel length leads to more obvious cancellation for short channel than the results for long channel. On the other hand, the breakdown inductance contribution increases with decreasing gate width. Therefore, obvious nonlinear cancellation between the breakdown inductance and transconductance is found as gate width decreases. Nonlinear distortion of the MOSFETs reduces for small gate width.
    Advisory Committee
  • Tzyy-Sheng Horng - chair
  • Chin-Chun Meng - co-chair
  • Hwann-Kaeo Chiou - co-chair
  • Chih-Wen Kuo - co-chair
  • Chien-Chang Huang - co-chair
  • Chie-In Lee - advisor
  • Files
  • etd-0115117-215818.pdf
  • Indicate in-campus at 5 year and off-campus access at 5 year.
    Date of Submission 2017-02-15

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