||Bismuth layer structure ferroelectrics (BLSFs) have attracted intensive investigation for the potential use in nonvolatile ferroelectric random access memory (NvRAM/FeRAM) and high temperature piezoelectric devices. In this thesis, there are three kinds of Bi-layered structure ferroelectric ceramics materials prepared by solid-state reaction methods. Investigations have been made on the crystal structure, surface morphology, and dielectric properties of these ferroelectric materials.|
In the chapter3 of this thesis, ferroelectric materials are SrBi2Ta2O9-based ceramics. One of the materials is SrBi2Ta2O9 composition with excess x wt% Bi2O3 (x=0, 2, and 4). Even 1280oC is used as the sintering temperature of stoichiometric SrBi2Ta2O9 composition, the X-ray diffraction patterns will show that the SrBi2Ta2O9 phase is coexisted with the raw material of Ta2O5 and the secondary phases of SrBi2O4 and BiTaO4. For SrBi2Ta2O9 composition with excess 2wt%- or 4wt%-Bi2O3-doped and sintered at 1040oC, the Ta2O5, SrBi2O4, and BiTaO4 phases are eliminated and only the SrBi2Ta2O9 phase is observed in the X-ray diffraction patterns. The other of SrBi2Ta2O9-based ceramics was doped with V2O5. V2O5 is used to substitute Ta2O5 of the SrBi2Ta2O9 ceramics to form SrBi2Ta2-xVxO9 composition, where x=0.1, 0.2, 0.3, and 0.4. For all SrBi2Ta2-xVxO9 composition, the crystal intensities of the (00l) planes (l =6, 8, 10, 12, and 14) increase with the increase of sintering temperature and saturate at 1050oC-sintered ceramics, and the increase in the crystal intensities of the (008) and (0010) planes are more obvious. For the same sintering temperature, the crystal intensities of the (00l) planes increase with the increase of V2O5 content and saturate at SrBi2Ta1.7V0.3O9 ceramics.
In the chapter4, ferroelectric materials are SrBi4Ti4O15-based ceramics. One of the materials is (Sr1-xBax)Bi4Ti4O15 (x=0, 005, 0.1, 0.15, and 0.02), and BaO is used to substitute SrO. Dielectric properties were investigated in the temperature of 25oC~ 805oC at 1MHz. It is found that Curie temperatures are shifted to higher temperature as the BaO content increased. For (Sr1-xBax)Bi4Ti4O15 ceramics sintered at 1150oC, the Curie temperature for x=0, 0.05, 0.1, 0.15, and 0.2 are 645oC, 665oC, 705oC, 725oC, and 745oC, respectively. The other is non-stoichiometric compositions SrBi4Ti4O15+x Bi2O3, (x= -0.04, -0.02, 0, 0.02, and 0.04). From the observations of SEM, the SrBi3.92Ti4O14.88 and the SrBi3.96Ti4O14.94 ceramics reveal a two-phased grain growth, the bar-typed and the irregularly disk-typed grains coexist; The other ceramics will reveal the irregularly disk-typed grains. From the X-ray diffraction patterns, Bi2Ti2O7 and SrTiO3 phases are observed in the SrBi3.92Ti4O14.88 and the SrBi3.96Ti4O14.94 ceramics. Except the SrBi3.96Ti4O14.94 ceramics, the other ceramics have revealed an unapparent splitting peak in the (119) plane.
In the chapter5, ferroelectric materials are (Na0.5Bi0.5)TiO3-BaTiO3-based ceramics. The 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 + x wt% Bi2O3 (x= 0, 1, 2, and 3) ceramics were fabricated by two different processes. The first process is that (Na0.5Bi0.5)TiO3 and BaTiO3 composition was calcined at 850oC and 1100oC, respectly, and then the calcined (Na0.5Bi0.5)TiO3 and BaTiO3 powders were mixed in according to 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 + x wt% Bi2O3 compositions. The second process was that the raw materials were mixed in accordance to the 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 + x wt% Bi2O3 compositions and then calcined at 900oC. The sintering process was carried out in air for 2h from 1120oC to 1240oC. As the sintering temperatures are higher than 1160oC, the maximum dielectric constants of ceramics made by the second method are higher than those of ceramics by the first method, and the maximum dielectric constant of this ceramics will reveal in the x =1 ceramics. Both ceramics reveal a broaden dielectric constant-temperature curves. The other is (1-x) (Na0.5Bi0.5)TiO3-x BaTiO3 compositions, where x= 0.03, 0.05, and 0.07, formatted by two different methods given above. The dielectric-temperature curves of (1-x) (Na0.5Bi0.5)TiO3-x BaTiO3-based ceramics are almost unchanged as the measured frequency changed from 10 kHz to 1MHz.