Title page for etd-0023117-232928


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URN etd-0023117-232928
Author Song-sain Guo
Author's Email Address ak201043@gmail.com
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Department Physics
Year 2016
Semester 1
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Growth and characterization of Mn doped nonpolar m-plane III-nitrides film by plasma-assisted molecular beam epitaxy
Date of Defense 2016-12-01
Page Count 66
Keyword
  • molecular beam epitaxy
  • nonpolar
  • m-plane GaN
  • m-plane sapphire
  • Abstract In this research, we grow m-plane gallium nitride on m-plane sapphire substrate using plasma-assisted molecular beam epitaxy (PAMBE)system with different plasma power and growth temperature. Then, we grow m-GaN doped Mn on the m-plane gallium nitride. A challenging issue in the growth of diluted magnetic semiconductors (DMSs)is secondary phase, and we suppress secondary phase controlling cell shutter to doped with Mn.
      GaN films are observed with their formation of surface and thickness. The crystal orientation and rocking curve are detected using high resolution X-ray diffraction (HRXRD). There are no observable secondary phase in the result of HRXRD. Nonpolar gallium nitride is anisotropy and calculating stress of film using Raman spectrum. The results of Raman scattering spectrum support Mn atoms substitutes Ga sites of GaN hexagonal structure. The results of superconductor quantum interference device (SQUID)show the ferromagnetic behavior at room temperature.
    Keywords: molecular beam epitaxy, m-plane GaN, nonpolar, m-plane sapphire
    Advisory Committee
  • Chao-Kuel Lee - chair
  • Der-Jun Jang - co-chair
  • Yung-Sung Chen - co-chair
  • Li-Wei Tu - advisor
  • Files
  • etd-0023117-232928.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2017-01-24

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