Title page for etd-0021116-181050


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URN etd-0021116-181050
Author Martin Rivera
Author's Email Address No Public.
Statistics This thesis had been viewed 5604 times. Download 831 times.
Department Electrical Engineering
Year 2015
Semester 1
Degree Master
Type of Document
Language English
Title A study on GaN HEMT–based Totem-Pole Bridgeless
PFC Converter
Date of Defense 2016-01-19
Page Count 95
Keyword
  • CCM
  • GaN HEMT
  • Irr
  • Totem-Pole PFC
  • PSIM
  • Qrr
  • Abstract The Totem-Pole bridgeless Power Factor Correction (PFC) converter inherits the MOSFET built in body diode reverse-recovery current (Irr) at Continuous Conduction Mode (CCM). The Irr issues limit the Totem Pole PFC to be adapted in the newest technological devices due to switching losses and low efficiency. The introduction of the first 600V transistor in a TO-247 package by Transphorm, shaped the Totem-Pole PFC in CCM operation attaining greater system benefits in power conversion application. This thesis will provide an insight approach by implementing the GaN HEMT in a TO-247 package replacing the MOSFET and SiC Schottky diode replacing the fast recovery diodes in this topology.
         To verification a universal CCM totem pole bridgeless PFC converter is design and simulated using PSIM 10.0.3 software. The control design for the totem pole PFC consists of a current control loop, voltage control loop and Pulse width modulation (PWM) to control main switches to be active at every positive or negative half cycle. The traditional boost bridgeless PFC control encompass by PWM signal to operate switches in order to maintain very high PFC as proposed. The simulation waveforms were obtained after five seconds of simulation in PSIM 10.0.3. It is clearly noticed that PSIM 10.0.3 print the characteristic of non-ideal components waveforms and efficiency for the GaN HEMT in a TO-247 package as explained by Transphorm engineers. Simulation results compared with calculation, it’s notable that the totem-pole PFC is applicable at CCM operation, attaining high power qualities by using GaN HEMT package. The output voltage is 407V and PF higher than 99.44% when the load is approximately 950W. The measured efficiency achieves 98.74% at high line conduction with switching frequency 100kHz.
    Advisory Committee
  • Hung-Liang Cheng - chair
  • Jen-Hao Teng - co-chair
  • Tzung-Lin Lee - advisor
  • Files
  • etd-0021116-181050.pdf
  • Indicate in-campus at 3 year and off-campus access at 3 year.
    Date of Submission 2016-01-21

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