||In this thesis, epitaxial (0002) and (10-10) ZnO films were grown by chemical vapor deposition |
(CVD) method on LiAlO2 (LAO) (200) substrate. We used Zinc Acetylacetonate as our precursor. High
purity oxygen and nitrogen were used as reaction gas and carrier gas, respectively.
After CVD reaction was finished, we utilized scanning electron microscope, x-ray diffractometer,
atomic force microscope, photoluminescence spectroscope, raman spectroscope, transmission electron
microscope to analyze ZnO films’ characteristics such as surface topography, crystal structure, crystal
quality, surface roughness, optical properties, residual stress and crystal orientation.
We set growth temperature, growth pressure and growth time as independent variables in our
experiment. And then, observing the growth changes of ZnO films. When the growth temperature was
between 550°C and 650°C, c-ZnO and m-ZnO were coexisted. The XRD signal of c-ZnO was weaker
at 650°C, which showed the growth of c-ZnO was obviously restrained. At 650°C, we altered the
growth pressure to 300torr, and we got pure m-ZnO films It indicated that the growth of c-ZnO was
also restrained by pressure. Last, the more growth time, the better crystallinity.
It was worth to mention that the experiment was improved by using the magnet to control the
starting and ending position for the quartz boat precisely. The surface roughness, optical properties
and crystallinity(the growth at 750°C, 300torr, and 180min, we got 101 arcsec for the value of FWHM
of rocking curve) were enhanced.