近年來科技進步快速，電子產品內部需求儲存量漸增，我們需要將零件小型化、輕量化，以提升效能及得到更多的功能性，因此需要縮小導電線寬及空間。在工業上使用光學微影技術 (Photolithography)取代傳統網版印刷技術 (Screen printing)，提升解析度的同時達到小型化、輕量化的目的。而在光學微影技術製造的導電線路中，經常有導電線路下層線寬比上層還窄，我們稱之為底切現象(Undercut)。
底切現象會導致線路與基板接觸不足，進而使線路容易從基板剝落，造成解析度降低、短路的發生。為了理解底切的機制並降低線路剝落發生的機率，本研究透過添加光敏劑，控制銀粉比例、曝光時間、及顯影時間等變因進行探討，觀察不同條件下底切的變化。我們發現在不同銀含量的感光銀膠 (Photosensitive silver paste)中，銀含量越高會使得底切現象更為嚴重，推測原因為曝光時感光銀膠中的銀粉會擋光，導致下層未固化，鹼洗過程中使底切現象更為劇烈。我們利用改變鹼洗時間證實了此推論，隨著鹼洗時間拉長，下層線寬越來越窄，以此推論下層為未固化層。接著我們試圖提升上層固化層厚度，降低下層未固化層在鹼洗中的影響，發現增加光起始劑比例使上層固化層交聯速率提升，上層固化厚度從36±1.7%提升至50±1.5 %，隨後透過添加奈米銀取代部分微米銀粉，使上層固化厚度進一步從50±1.5%提升至整體厚度完全固化，將底切率從1.9改善至1.1，並使解析度上升。

Recently, rapid development on the manufacturing technology of electronic devices require passive components that to be compacted into high density integrated circuit. This is done by reducing the width and space of conductive lines. Photolithography technology can be utilized to improve the line resolution of circuits, but highly lost and complicated.
Undercut is phenomena that defined line patterns have a wider upper surface (denoted as upper layer) than the bottom (denoted as bottom layer). Undercut will lead to insufficient contact between the circuit and the substrate, causing the circuit to easily peel off from the substrate. This study explored the mechanism of undercuts under different conditions by understanding the influence of photosensitizers, proportions of silver powder, exposure time, and developing time. We found that the higher the silver contents, the higher degrees of undercut. The silver powder blocks the light during exposure, causing incomplete cure of bottom. By increasing the time, the line width of the lower layer becomes narrower, suggesting that the lower layer is incomplete cured. We found that increasing the proportion of photoinitiator increased the crosslinking rates of the upper layer. Thus the cured thickness of the upper layer increased from 36±1.7% to 50±1.5 %. When we used nano silver in replace of the micron silver powder, the cured thickness of the upper layer was further increased from 50±1.5% to nearly 100%, and the undercut index (width of upper layer/bottom layer) was improved from 1.9 to 1.1.

論文審定書 i
謝誌 ii
摘要 iii
Abstract iv
圖目錄 viii
表目錄 xii
第一章、緒論 1
1.1 研究動機 1
1.2 研究背景 2
1.2.1 線路製作及限制 2
1.2.2 網版印刷(Screen printing)29工作原理 2
1.2.3 光學微影製程 5
1.2.4 感光銀膠的組成 7
1.2.5 感光銀膠的工作原理 9
1.3 高解析度線路的挑戰-底切(Undercut) 10
1.4 文獻回顧 11
1.4.1 光起始劑影響其解析度1 11
1.4.2 銀粒徑大小影響散射造成外擴43 12
1.4.1 感光銀膠中的無機物質造成底切 13
1.4.2 透光度問題導致底切 13
第二章、實驗與鑑定方法 15
2.1 實驗藥品 15
2.2 感光銀膠的製備 17
2.3 銀胺溶液製備 17
2.4 由草酸銀製備奈米銀 18
2.4.1 合成草酸銀59(Silver oxalate, Ag2C2O4) 18
2.4.2 奈米銀的製備8 18
2.5 光學微影實驗製程 18
2.5.1 網版印刷機 19
2.5.2 光罩 19
2.5.3 曝光機 20
2.5.4 顯影裝置 21
2.6 實驗鑑定方法 22
2.6.1 全反射傅立葉轉換紅外線光譜儀(Fourier-transform infrared spectroscopy attenuated total reflection) 22
2.6.2 核磁共振儀(Nuclear Magnetic Resonance) 22
2.6.3 鍍金機 (Gilding machine) 22
2.6.4 掃描式電子顯微鏡(Scanning electron microscope) 22
2.6.5 3-D光學顯微鏡(3-Dimension optical microscope) 22
2.6.6 二點式探測電阻量測儀(Two-point probe resistance meter) 23
2.6.7 熱重量分析儀 (Thermogravimetric Analysis) 23
2.6.8 X光繞射分析儀(X-ray diffraction) 23
第三章、研究結果 24
3.1 感光漿料底切機制之探討 24
3.2 不含銀感光漿料底切之探討 25
3.2.1 交聯程度對底切之影響 25
3.2.2 黃變對底切的影響 28
3.2.3 感光漿料不含銀形成底切的機制 30
3.3 感光漿料含銀底切機制之探討 35
3.3.1 不同銀含量之感光漿料對底切之影響 35
3.3.2 增加曝光時間對底切的影響 38
3.3.3 鹼洗時間對底切的影響 41
3.4 解決感光漿料含銀底切的方式 43
3.4.1 增加光起始劑以提升上層固化層厚度 43
3.4.2 光起始劑增加上層厚度的證據 47
3.4.3 壓低網版厚度解決底切 49
3.4.4 添加銀胺溶液取代部分銀粉來改善底切 51
3.4.5 添加奈米粉體取代部分銀粉來改善底切 54
3.4.6 體積電阻計算 58
第四章、研究結果討論 59
第五章、結論 68
參考文獻 69

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